dss20200l document number: ds31604 rev. 3 - 2 1 of 7 www.diodes.com november 2013 ? diodes incorporated dss20200l 20v pnp low saturation transistor in sot23 features ? bv ceo > -20v ? i c = -2a continuous collector current ? i cm = -4a peak pulse current ? low saturation voltage v ce(sat) < -120mv @ -1a ? r ce(sat) = 40m ? for a low equivalent on-resistance ? complimentary npn type : dss20201l ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic, ?green? molding compound ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin plated leads, solderable per mil-std-202, method 208 ? weight: 0.008 grams (approximate) ordering information (note 4) product marking reel size (inches) tape width (mm) quantity per reel dss20200l-7 zp1 7 8 3,000 dss20200l-13 zp1 13 8 10,000 notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen and antimony free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html. marking information date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot23 top view pin-out top view device symbol c e b c e b zp1 = product type marking code ym = date code marking y = year (ex: a = 2013) m = month (ex: 9 = september) zp1 ym
dss20200l document number: ds31604 rev. 3 - 2 2 of 7 www.diodes.com november 2013 ? diodes incorporated dss20200l absolute maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit collector-base voltage v cbo -20 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -7 v peak pulse collector current i cm -4 a continuous collector current i c -2 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation (note 5) p d 600 mw (note 6) 1.2 thermal resistance, junction to ambient air (note 5) r ja 209 c/w (note 6) 104 thermal resistance, junction to leads (note 7) r jl 75 operating and storage temperature range t j , t stg -55 to +150 c esd ratings (note 8) characteristic symbol value unit jedec class electrostatic discharge - human body model esd hbm 4,000 v 3a electrostatic discharge - machine model esd mm 400 v c notes: 5. for a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm fr4 pcb; devic e is measured under still air conditions whilst operating in a steady-state. 6. same as note (5), except mounted on 25mm x 25mm 1oz copper. 7. thermal resistance from junction to so lder-point (at the end of collector lead). 8. refer to jedec specification jesd22-a114 and jesd22-a115.
dss20200l document number: ds31604 rev. 3 - 2 3 of 7 www.diodes.com november 2013 ? diodes incorporated dss20200l thermal characteristics and derating information 0 0 p , power dissipation (w) d t , ambient temperature ( c) a (note 3) figure 1 power dissipation vs. ambient temperature 0.2 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 (note 4) 0.1 1 10 100 -v , collector-emitter voltage (v) ce figure 2 typical collector current vs. collector-emitter voltage 0.001 0.01 0.1 1 10 -i , c o lle c t o r c u r r e n t (a) c dc pw = 100ms pw = 10ms 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t , pulse duration time (s) 1 figure 3 transient thermal response t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 166c/w ja ja p(pk) t 1 t 2 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
dss20200l document number: ds31604 rev. 3 - 2 4 of 7 www.diodes.com november 2013 ? diodes incorporated dss20200l electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test conditions off characteristics collector-base breakdown voltage bv cbo -20 ? ? v i c = -100a collector-emitter breakdown voltage (note 9) bv ceo -20 ? ? v i c = -10ma emitter-base breakdown voltage bv ebo -7 ? ? v i e = -100a collector-base cutoff current i cbo ? ? -100 na v cb = -20v, i e = 0 emitter-base cutoff current i ebo ? ? -100 na v eb = -7v, i c = 0 on characteristics (note 9) dc current gain h fe 250 ? ? ? v ce = -2v, i c = -10ma 250 ? ? v ce = -2v, i c = -500ma 180 ? ? v ce = -2v, i c = -1a 150 ? ? v ce = -2v, i c = -2a collector-emitter saturation voltage v ce(sat) ? ? -13 mv i c = -0.1a, i b = -10ma ? -50 -90 i c = -1a, i b = -100ma ? -100 -120 i c = -1a, i b = -10ma ? -80 -180 i c = -2a, i b = -200ma equivalent on-resistance r ce(sat) ? 40 90 m i c = -2a, i b = -200ma base-emitter saturation voltage v be(sat) ? ? -0.9 v i c = -1a, i b = -10ma base-emitter turn-on voltage v be(on) ? ? -0.9 v v ce = -2v, i c = -1a small signal characteristics transition frequency f t 100 ? ? mhz v ce = -5v, i c = -100ma, f = 100mhz output capacitance c obo ? ? 100 pf v cb = -3v, f = 1mhz input capacitance c ibo ? ? 330 pf v eb = -0.5v, f = 1mhz switching characteristics turn-on time t on ? ? 180 ns v cc = -15v, i c = -750ma, i b1 = -15ma delay time t d ? ? 60 ns rise time t r ? ? 120 ns turn-off time t off ? ? 430 ns v cc = -15v, i c = -750ma, i b1 = i b2 = -15ma storage time t s ? ? 300 ns fall time t f ? ? 130 ns note: 9. measured under pul sed conditions. pulse width 300s. duty cycle 2% typical electrical characteristics (@t a = +25c, unless otherwise specified.) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0246810 -v , collector-emitter voltage (v) ce figure 4 typical collector current vs. collector-emitter voltage -i , c o lle c t o r c u r r en t (a) c i = -1ma b i = -2ma b i = -3ma b i = -4ma b i = -5ma b 10 100 1,000 h, d c c u r r en t g ain fe 0.1 1 10 100 1,000 10,000 -i , collector current (ma) c figure 5 typical dc current gain vs. collector current t = 150c a t = 25c a t = -55c a t = 85c a v = -2v ce
dss20200l document number: ds31604 rev. 3 - 2 5 of 7 www.diodes.com november 2013 ? diodes incorporated dss20200l 0.001 0.01 0.1 1 1 10 100 1,000 10,000 -i , collector current (ma) c figure 6 typical collector-emitter saturation voltage vs. collector current -v , c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) i/i = 10 cb t = 85c a t = 25c a t = -55c a t = 150c a 1 10 100 1,000 10,000 0 0.2 0.4 0.6 0.8 1.0 1.2 -v , base-emi t t e r t u r n - o n v o l t a g e (v) be(on) -i , collector current (ma) c figure 7 typical base-emitter turn-on voltage vs. collector current t = 150c a t = 25c a t = -55c a t = 85c a v = -2v ce 1 10 100 1,000 10,000 -i , collector current (ma) c figure 8 typical base-emitter saturation voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.0 1.2 -v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) t = 150c a t = 25c a t = -55c a t = 85c a i = 10 cb /i 0.1 1 10 100 v , reverse voltage (v) r figure 9 typical capacitance characteristics 1 10 100 1,000 c a p a c i t a n c e (p f ) c ibo c obo f = 1mhz 1 10 100 1,000 0 1020304050607080 90100 -i , collector current (ma) c figure 10 typical gain-bandwidth product vs. collector current f, g ain-bandwid t h p r o d u c t (m h z) t v = -5v f = 100mhz ce
dss20200l document number: ds31604 rev. 3 - 2 6 of 7 www.diodes.com november 2013 ? diodes incorporated dss20200l package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.903 1.10 1.00 k1 - - 0.400 l 0.45 0.61 0.55 m 0.085 0.18 0.11 0 8 - all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 a m j l d f b c h k g k1 x e y c z
dss20200l document number: ds31604 rev. 3 - 2 7 of 7 www.diodes.com november 2013 ? diodes incorporated dss20200l important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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